Slične LX803

  • LX802
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • LX803
    • 45 Watt, silicon gate enhancement mode RF power LDMOS transistor

LX803 Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje :  

PIN : 2 

Temperature : Min -65 °C | Max 150 °C

Veličina : 58 KB

Application : 45 Watt, silicon gate enhancement mode RF power LDMOS transistor 

LX803 Download PDF