Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > LX802
LX802 spec.: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > LX802
LX802 spec.: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
Proizvođač : Polyfet RF
Pakiranje :
PIN : 2
Temperature : Min -65 °C | Max 150 °C
Veličina : 40 KB
Application : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor