Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > L8801P
L8801P spec.: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje : SO-8
PIN : 8
Temperature : Min -65 °C | Max 150 °C
Veličina : 43 KB
Application : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Download PDF