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L88016 spec.: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L88016 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 4
Temperature : Min -65 °C | Max 150 °C
Veličina : 38 KB
Application : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L88016 Download PDF