F1007 spec.: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1007

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1007 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 41 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor