Slične F1004

  • F1001
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1001C
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1003
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1004
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1005
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1006
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1007
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1004 Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje :  

PIN : 6 

Temperature : Min -65 °C | Max 150 °C

Veličina : 40 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1004 Download PDF