S8550LT1 spec.: High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

Slične S8550LT1

S8550
- Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V
S8550LT1
- High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 Datasheet i Izvanred

Proizvođač : WingShing

Pakiranje : SOT-23

PIN : 3

Temperature : Min 0 °C | Max 0 °C

Veličina : 93 KB

Application : High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V