okDatasheet.com

Slične BUT11A

  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11A
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
  • BUT11AF
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12A
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12AF
    • NPN silicon diffused power transistor. For switching power circuits

BUT11A Datasheet i Izvanred

Proizvođač : WingShing 

Pakiranje : TO-220 

PIN : 3 

Temperature : Min 0 °C | Max 0 °C

Veličina : 24 KB

Application : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. 

BUT11A Download PDF