Path:OKDatasheet > Poluvodički tablični > ST Microelectronics Datasheet > STH6NA80FI
STH6NA80FI spec.: N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
Slične STH6NA80FI
- STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
- STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH6NA80FI Datasheet i Izvanred
Proizvođač : ST Microelectronics
Pakiranje :
PIN : 0
Temperature : Min 0 °C | Max 0 °C
Veličina : 151 KB
Application : N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH6NA80FI Download PDF