Path:OKDatasheet > Poluvodički tablični > ST Microelectronics Datasheet > MJD122-1
MJD122-1 spec.: "NPN darlington transistor for high DC current gain, 100V, 5A"
Slične MJD122-1
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122-1 Datasheet i Izvanred
Proizvođač : ST Microelectronics
Pakiranje : TO-252
PIN : 3
Temperature : Min -65 °C | Max 150 °C
Veličina : 100 KB
Application : "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 Download PDF