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SM706 spec.: 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
SM706 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 4
Temperature : Min -65 °C | Max 150 °C
Veličina : 40 KB
Application : 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
SM706 Download PDF