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SA741 spec.: 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
Slične SA741
- SA741
- 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 4
Temperature : Min -65 °C | Max 150 °C
Veličina : 39 KB
Application : 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Download PDF