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S8201 spec.: 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 8
Temperature : Min -65 °C | Max 150 °C
Veličina : 40 KB
Application : 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 Download PDF