P281 spec.: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Slične P281

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje : SO-8

PIN : 8

Temperature : Min -65 °C | Max 150 °C

Veličina : 41 KB

Application : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor