P124 spec.: 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Slične P124

P124
- 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje : SO-8

PIN : 8

Temperature : Min -65 °C | Max 150 °C

Veličina : 36 KB

Application : 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor