P122 spec.: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

Slične P122

P122
- "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje : SO

PIN : 6

Temperature : Min -65 °C | Max 150 °C

Veličina : 47 KB

Application : "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"