P121 spec.: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

Slične P121

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje : SO-8

PIN : 8

Temperature : Min -65 °C | Max 150 °C

Veličina : 35 KB

Application : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor