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LP801 spec.: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 2
Temperature : Min -65 °C | Max 150 °C
Veličina : 38 KB
Application : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 Download PDF