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LC801 spec.: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
Slične LC801
- LC801
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 6
Temperature : Min -65 °C | Max 150 °C
Veličina : 40 KB
Application : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC801 Download PDF