Slične L8821P

  • L8821P
    • 5 Watt, silicon gate enhancement mode RF power LDMOS transistor

L8821P Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje : SO-8 

PIN : 8 

Temperature : Min -65 °C | Max 150 °C

Veličina : 43 KB

Application : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor 

L8821P Download PDF