Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > L8821P
L8821P spec.: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > L8821P
L8821P spec.: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
Proizvođač : Polyfet RF
Pakiranje : SO-8
PIN : 8
Temperature : Min -65 °C | Max 150 °C
Veličina : 43 KB
Application : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor