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L8821P spec.: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
Slične L8821P
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje : SO-8
PIN : 8
Temperature : Min -65 °C | Max 150 °C
Veličina : 43 KB
Application : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Download PDF