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L2801 spec.: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
Slične L2801
- L2801
- 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje : SO
PIN : 2
Temperature : Min -65 °C | Max 150 °C
Veličina : 46 KB
Application : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 Download PDF