Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > L225
L225 spec.: 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
Slične L225
- L225
- 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje : SO-8
PIN : 8
Temperature : Min -65 °C | Max 150 °C
Veličina : 41 KB
Application : 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Download PDF