F5001 spec.: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F5001

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 2

Temperature : Min -65 °C | Max 150 °C

Veličina : 40 KB

Application : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor