F2213 spec.: 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F2213

F2211
- 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2212
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2213
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2213 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 39 KB

Application : 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor