F2021 spec.: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F2021

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 2

Temperature : Min -65 °C | Max 150 °C

Veličina : 40 KB

Application : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor