Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > F2012
F2012 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > F2012
F2012 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Proizvođač : Polyfet RF
Pakiranje :
PIN : 2
Temperature : Min -65 °C | Max 150 °C
Veličina : 40 KB
Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor