Slične F2012

  • F2012
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2013
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje :  

PIN : 2 

Temperature : Min -65 °C | Max 150 °C

Veličina : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2012 Download PDF