F2012 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F2012

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 2

Temperature : Min -65 °C | Max 150 °C

Veličina : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor