F1510 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1510

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 2

Temperature : Min -65 °C | Max 150 °C

Veličina : 39 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor