F1410 spec.: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1410

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 6

Temperature : Min -65 °C | Max 150 °C

Veličina : 39 KB

Application : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor