F1240 spec.: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1240

F1240
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 6

Temperature : Min -65 °C | Max 150 °C

Veličina : 45 KB

Application : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor