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Slične F1222

  • F1220
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1221
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1222
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1222 Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje :  

PIN : 2 

Temperature : Min -65 °C | Max 150 °C

Veličina : 41 KB

Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1222 Download PDF