Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > F1214
F1214 spec.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214 Datasheet i Izvanred
Proizvođač : Polyfet RF
Pakiranje :
PIN : 6
Temperature : Min -65 °C | Max 150 °C
Veličina : 38 KB
Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214 Download PDF