F1206 spec.: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1206

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 2

Temperature : Min -65 °C | Max 150 °C

Veličina : 39 KB

Application : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor