Slične F1174

  • F1170
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1174
    • 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet i Izvanred

Proizvođač : Polyfet RF 

Pakiranje :  

PIN : 4 

Temperature : Min -65 °C | Max 150 °C

Veličina : 49 KB

Application : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1174 Download PDF