F1120 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1120

F1120
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1120 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 48 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor