F1081 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1081

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 43 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor