F1070 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1070

F1070
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1072
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1074
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077
- 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 41 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor