Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > F1070
F1070 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Poluvodički tablični > Polyfet RF Datasheet > F1070
F1070 spec.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Proizvođač : Polyfet RF
Pakiranje :
PIN : 4
Temperature : Min -65 °C | Max 150 °C
Veličina : 41 KB
Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor