F1058 spec.: 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Slične F1058

F1058
- 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Datasheet i Izvanred

Proizvođač : Polyfet RF

Pakiranje :

PIN : 4

Temperature : Min -65 °C | Max 150 °C

Veličina : 41 KB

Application : 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor