Slične PHX23NQ10T

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    • 100 V, N-channel trenchMOS transistor
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    • 500 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
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    • 600 V, power MOS transistor avalanche energy rated
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PHX23NQ10T Datasheet i Izvanred

Proizvođač : Philips 

Pakiranje : SOT 

PIN : 3 

Temperature : Min -65 °C | Max 150 °C

Veličina : 69 KB

Application : 100 V, N-channel trenchMOS transistor 

PHX23NQ10T Download PDF