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PHD6N10E spec.: 100 V, power MOS transistor
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- PHD6N10E
- 100 V, power MOS transistor
- PHD6N10E
- PowerMOS transistor
PHD6N10E Datasheet i Izvanred
Proizvođač : Philips
Pakiranje : SOT
PIN : 3
Temperature : Min -55 °C | Max 175 °C
Veličina : 62 KB
Application : 100 V, power MOS transistor
PHD6N10E Download PDF