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PHB8ND50E spec.: 500 V, power MOS transistor FREDFET, avalanche energy rated
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PHB8ND50E Datasheet i Izvanred
Proizvođač : Philips
Pakiranje : SOT
PIN : 3
Temperature : Min -55 °C | Max 150 °C
Veličina : 80 KB
Application : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E Download PDF