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PHB6N60E spec.: 600 V, power MOS transistor avalanche energy rated
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PHB6N60E Datasheet i Izvanred
Proizvođač : Philips
Pakiranje : SOT
PIN : 3
Temperature : Min -55 °C | Max 150 °C
Veličina : 81 KB
Application : 600 V, power MOS transistor avalanche energy rated
PHB6N60E Download PDF