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BUK555-200B spec.: PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
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BUK555-200B Datasheet i Izvanred
Proizvođač : Philips
Pakiranje : TO220AB
PIN : 3
Temperature : Min 0 °C | Max 175 °C
Veličina : 76 KB
Application : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.
BUK555-200B Download PDF