NTE6412 spec.: Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 63V (typ).

Slične NTE6412

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NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6412 Datasheet i Izvanred

Proizvođač : NTE Electronic

Pakiranje : DO35

PIN : 2

Temperature : Min -40 °C | Max 125 °C

Veličina : 19 KB

Application : Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 63V (typ).