MTW10N100E spec.: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

Slične MTW10N100E

MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW14N50E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW16N40E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Datasheet i Izvanred

Proizvođač : Motorola

Pakiranje : TO-247AE

PIN : 4

Temperature : Min -55 °C | Max 150 °C

Veličina : 211 KB

Application : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole