Slične MTB36N06V

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    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
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    • TMOS V power field effect transistor
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    • TMOS E-FET high energy power FET
  • MTB36N06V
    • TMOS V power field effect transistor
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
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    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N60E
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB36N06V Datasheet i Izvanred

Proizvođač : Motorola 

Pakiranje : DPAK 

PIN : 4 

Temperature : Min -55 °C | Max 175 °C

Veličina : 265 KB

Application : TMOS V power field effect transistor 

MTB36N06V Download PDF