Path:OKDatasheet > Poluvodički tablični > Micro Electronics Datasheet > BD241
BD241 spec.: 4mW NPN silicon epitaxial base power transistor
Path:OKDatasheet > Poluvodički tablični > Micro Electronics Datasheet > BD241
BD241 spec.: 4mW NPN silicon epitaxial base power transistor
Proizvođač : Micro Electronics
Pakiranje : TO-220B
PIN : 3
Temperature : Min -55 °C | Max 150 °C
Veličina : 106 KB
Application : 4mW NPN silicon epitaxial base power transistor