Path:OKDatasheet > Poluvodički tablični > Micro Electronics Datasheet > BC261
BC261 spec.: 360mW PNP high gain low noise silicon planar epitaxial transistor
Path:OKDatasheet > Poluvodički tablični > Micro Electronics Datasheet > BC261
BC261 spec.: 360mW PNP high gain low noise silicon planar epitaxial transistor
Proizvođač : Micro Electronics
Pakiranje : TO-18
PIN : 3
Temperature : Min -65 °C | Max 200 °C
Veličina : 103 KB
Application : 360mW PNP high gain low noise silicon planar epitaxial transistor