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BUL54B spec.: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
Slične BUL54B
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL54B Datasheet i Izvanred
Proizvođač : Magnatec
Pakiranje : TO220
PIN : 3
Temperature : Min 0 °C | Max 150 °C
Veličina : 19 KB
Application : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL54B Download PDF