Path:OKDatasheet > Poluvodički tablični > Cree Datasheet > W4TRD0R-0D00
W4TRD0R-0D00 spec.: Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Proizvođač : Cree
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PIN : 0
Temperature : Min 0 °C | Max 0 °C
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Application : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition