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| Dio Br. | Application |
|---|---|
| GP15G | 400 V, 1.5 A sintered glass passivated junction rectifier |
| GP10N | 1100 V, 1 A sintered glass passivated junction rectifier |
| GF10K | 800 V, 1 A surface mount glass passivated junction rectifier |
| GF10A | 50 V, 1 A surface mount glass passivated junction rectifier |
| SF26 | 400 V, 2.0 A super fast rectifier |
| HER201 | 50 V, 2 A high efficiency rectifier |
| BC847B | 45 V, 100 mA general purpose transistor NPN silicon |
| RGP30M | 1000 V, 3 A sintered glass passivated junction fast recovery rectifier |
| RL203 | 200 V, 2 A silicon rectifier |
| HER202 | 100 V, 2 A high efficiency rectifier |
| GF20K | 800 V, 2 A surface mount glass passivated junction rectifier |
| RGP10JA | 600 V, 1 A sintered glass passivated junction fast recovery rectifier |
| RGF30K | 800 V, 3 A surface mount glass passivated junction fast recovery rectifier |
| HER203 | 200 V, 2 A high efficiency rectifier |
| EGF30G | 400 V, 3A surface mount glass passivated junction high efficient rectifier |
| EGP10A | 50 V, 1A sintered glass passivated junction high efficient rectifier |
| RGP20JA | 600 V, 2 A sintered glass passivated junction fast recovery rectifier |
| 1A6 | 800 V, 1.0 A silicon rectifier |
| 2W02G | 200 V, 2.0 A sintered glass passivated bridge rectifier |
| FR103 | 200 V, 1 A fast recovery rectifier |
| SB360 | 60 V, 3 A schottky barrier rectifier |
| UGF30K | 800 V, 3.0 A surface mount glass passivated junction ul trafast efficient rectifier |
| FR103 | 200 V, 1 A fast recovery rectifier |
| GP15J | 600 V, 1.5 A sintered glass passivated junction rectifier |
| GP10B | 100 V, 1 A sintered glass passivated junction rectifier |
| RGP10D | 200 V, 1 A sintered glass passivated junction fast recovery rectifier |
| 1A2 | 100 V, 1.0 A silicon rectifier |
| 1N4148 | 100 V, 150 mA small-signal diode |
Zowie Profil
ZOWIE Technology Corporation founded in 1994 is a leading designer and manufacturer of advanced discrete semiconductor products. The inaugurators, Ding-Hua Hu and George Tai are the well-known leaders in the semiconductor field in Taiwan. Since there is no new significant progress in diode products for more than 20 years they decided to endeavor their efforts to this industry with innovation and futurity.